The European Semiconductor Corporation Semiconductor Semiconductor and China Semiconductor Corporation Sanan Optoelectronics said that a semiconductor manufacturing joint venture will be formed in China with a total investment of US $ 3.2 billion (about S $ 4.313 billion).
According to the Dow Jones News Agency, the Semiconductor Semiconductor and San'an Optoelectronics said on Wednesday (June 7) that the two parties have signed an agreement to establish a silicon carbide device manufacturing project in Chongqing, China to meet ChinaMotor electrification and industrial power and energy applications have the growing demand for semiconductors.
The two companies said that the joint venture project is expected to be put into production in the fourth quarter of 2025, and the project will be fully completed in 2028.
The two companies also said that it is expected that the total establishment of the joint venture will require a total investment of 3.2 billion US dollars, including about $ 2.4 billion in capital expenditures in the next five years;Optoelectronics contribution, support and loan of the local government.
The term of Italian semiconductor and Sanan Optoelectronics, the completion of the project still needs to be approved by the regulatory authorities.
