China has made important progress in two -dimensional high -performance floating grid

Zhai Tianyou team, a professor of material forming and mold technology of China University of Science and Technology, China Huazhong University of Science and Technology, has made important progress in the two -dimensional high -performance floating grid crystal memory memory, and has developed a new two -type two with edge contact characteristicsIn contrast to the performance of the existing commercial flash memory device, the performance of the existing commercial flash memory device has improved the key properties such as the speed and cycle life.

Xinhua News Agency on Monday (September 18) reported the above news.

As a charge memory, the floating grid transistor is a core component to form the current large -capacity solid state memory development.However, the current scratching time required for commercial flashing end -silicon -based floating grid storage devices is about 10 microseconds to 1 milliseconds, which is far lower than the data processing speed of the CPU -second -class CPU -second -class CPU100,000 times, it is difficult to satisfy frequent data interaction.

Two -dimensional materials have atomic thickness and the surface of no suspension keys. When the device is integrated, it can effectively avoid problems such as narrow channel effects and interface attitude.Ideal materials.However, in previous studies, the data rubbing speed is extremely slow, and few devices can achieve high -speed and high -circulation durability at the same time.

According to Xinhua News Agency, in the face of this challenge, the Zhai Tianyou team developed a new two-dimensional floating grid crystal device with edge contact characteristics.The phase transforms the transition from the semiconductor phase (2H) to the metal phase (1T), so that the metal-semiconductor contact type in the device transitions from the traditional 3D/2D surface contact to the 2D/2D edge of the atomic sharp interface.A high -performance storage device with a scratching speed from 10th to 100th and 100th, and the cycle durability exceeds 3 million times.

The report quoted Zhai Tianyou and said: "Through comparison of traditional contact electrodes and new edges, the study shows that optimizing the preparation of the metal-semiconductor contact interface in the two-dimensional floating grid storage device faces its rubbing speed.Key performance such as cycle life has an important role. "